Open AccessGrowth of high quality Ge-on-Si layer by using an ultra-thin LT-Si buffer in RPCVD
Author(s) -
J. Zhang,
X. Chen,
J. A. Wang,
G. B. Chen,
Zhaohuan Tang,
Kai Zhou Tan,
Wenjing Cui
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/504/1/012020
Subject(s) - materials science , epitaxy , crystallinity , optoelectronics , annealing (glass) , surface roughness , dislocation , photoluminescence , thin film , germanium , layer (electronics) , band gap , silicon , nanotechnology , composite material