Open AccessDonor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer
Author(s) -
D. A. Safonov,
А. Н. Виниченко,
Yu D. Sibirmovsky,
Н. Каргин,
И. С. Васильевский
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/498/1/012031
Subject(s) - high electron mobility transistor , materials science , quantum well , impurity , doping , scattering , electron , ionization , optoelectronics , electron mobility , silicon , gallium arsenide , condensed matter physics , layer (electronics) , heterojunction , electron scattering , chemistry , ion , transistor , optics , nanotechnology , physics , laser , organic chemistry , quantum mechanics , voltage