Open AccessApplication of the ion mixing method for doping near surface layers of the silicon single crystals
Author(s) -
Н. В. Волков,
B.A. Kalin,
Yu. A. Voronov,
В.С. Першенков
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/498/1/012025
Subject(s) - ion , silicon , sputtering , rutherford backscattering spectrometry , materials science , secondary ion mass spectrometry , analytical chemistry (journal) , ion beam deposition , atomic physics , doping , ion beam , ion beam mixing , mass spectrometry , penetration depth , diamond , ion implantation , chemistry , thin film , optics , optoelectronics , nanotechnology , physics , organic chemistry , chromatography , composite material