Open AccessSwitching and synaptic characteristics of AZO/ZnO/ITO valence change memory device
Author(s) -
Firman Mangasa Simanjuntak,
Sridhar Chandrasekaran,
Femiana Gapsari,
Tseung–Yuen Tseng
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/494/1/012027
Subject(s) - materials science , optoelectronics , long term potentiation , conductance , electrode , valence (chemistry) , voltage , computer science , electrical engineering , chemistry , physics , condensed matter physics , engineering , biochemistry , receptor , organic chemistry