Open AccessInAlAs/InGaAs/InP heterostructures for microwave photodiodes grown by molecular beam epitaxy
Author(s) -
Д. В. Дмитриев,
N. A. Valisheva,
A. M. Gilinsky,
I. B. Chistokhin,
A. I. Toropov,
К. С. Журавлев
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/475/1/012022
Subject(s) - molecular beam epitaxy , heterojunction , photodiode , optoelectronics , materials science , epitaxy , microwave , substrate (aquarium) , schottky barrier , schottky diode , gallium arsenide , nanotechnology , diode , physics , layer (electronics) , oceanography , quantum mechanics , geology