Open AccessAnalog Ultra-High Speed Thyristor Design Based on Baker Anti-Saturation Circuit
Author(s) -
Hongling Xie,
Juan Li,
Lin Niu,
Qun Cai
Publication year - 2018
Publication title -
iop conference series. materials science and engineering
Language(s) - Uncategorized
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/452/4/042032
Subject(s) - thyristor , gate turn off thyristor , static induction thyristor , integrated gate commutated thyristor , mos controlled thyristor , transistor , switching time , electrical engineering , materials science , voltage , engineering , gate oxide