Open AccessOverview of Recent Progress of Semiconductor Power Devices based on Wide Bandgap Materials
Author(s) -
Xiaoyang Cheng
Publication year - 2018
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/439/2/022033
Subject(s) - power semiconductor device , materials science , insulated gate bipolar transistor , wide bandgap semiconductor , engineering physics , jfet , reliability (semiconductor) , bandgap voltage reference , band gap , electrical engineering , power (physics) , electronic engineering , optoelectronics , engineering , transistor , voltage , field effect transistor , physics , quantum mechanics , voltage divider , dropout voltage