Open AccessCrystal Structure, Surface Topography, Surface Morphology and Optical Properties of DC Magnetron Sputtered VO2 Thin Films using VO2 Target
Author(s) -
Noormariah Muslim,
Muhammad Nur Syafi’ie Md Idris,
Ying Woan Soon,
Yuan-Fong Chou Chau,
Chee Ming Lim,
Nyuk Yoong Voo
Publication year - 2018
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/409/1/012025
Subject(s) - materials science , thin film , crystallite , transmittance , sputter deposition , surface roughness , optics , crystal (programming language) , analytical chemistry (journal) , grain size , texture (cosmology) , sputtering , optoelectronics , composite material , nanotechnology , chemistry , physics , image (mathematics) , chromatography , artificial intelligence , computer science , metallurgy , programming language
Vanadium dioxide (VO 2 ) thin films were deposited at room temperature on Corning 2947 glass substrates by direct current (DC) magnetron sputtering with a high purity VO 2 target. Crystal structure, surface topography, surface morphology and optical properties of the deposited VO2 thin films were investigated. The deposited films exhibited a single orientation of (110) with a crystallite size of 41.3 nm as confirmed by the X-ray diffraction analysis and Scherrer formula, respectively. From the surface topography analysis, the film surface had root mean square surface roughness of ~6.8 nm and consisted of round-shaped grains. Similarly, from the surface morphology analysis, spherical-like grains were observed on the surface of the deposited VO 2 thin films with estimated average grain size of 34.2 nm. The deposited thin films showed high transmittance and low reflectance in the visible and near-infrared wavelength regions at room temperature. In addition, from the optical transmittance against temperature measurements, only a few transmittance variation and a slight change in hysteresis loop were detected during heating and cooling between room temperature and 100 °C. Hence, the deposited VO 2 thin films were found to exhibit lack of phase transition.