Open AccessEffect of Substrate Orientation on the Growth Direction of In x Ga1-x As Nanowires (NWs)
Author(s) -
Edy Wibowo,
Nasihah Ulya,
Zulkafli Othaman,
Putut Marwoto,
Imam Sumpono,
Mahardika Prasetya Aji,
Sulhadi Sulhadi,
Budi Astuti,
Mamat Rokhmat,
Suwandi Suwandi,
Abrar Ismardi,
Sutisna
Publication year - 2018
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/395/1/012003
Subject(s) - nanowire , metalorganic vapour phase epitaxy , materials science , perpendicular , substrate (aquarium) , optoelectronics , lattice (music) , epitaxy , condensed matter physics , crystallography , nanotechnology , chemistry , geometry , physics , oceanography , mathematics , layer (electronics) , geology , acoustics
We have grown the In x Ga l- x As NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on GaAs(l00), while kinks NWs were perceived on Si(lll). We found that the growth direction of the In x Ga l- x As NWs can be easily controlled using certain orientation of the substrate by considering its lattice mismatch and its surface energy.