Open AccessMechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3
Author(s) -
С. А. Кукушкин,
А. В. Осипов
Publication year - 2018
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/387/1/012044
Subject(s) - epitaxy , substitution (logic) , materials science , crystallography , atom (system on chip) , single crystal , chemistry , nanotechnology , layer (electronics) , computer science , embedded system , programming language