Open AccessThe Effect of Temperature to the Formation of Optically Active Point-defect Complex, the Carbon G-centre in Pre-amorphised and Non-amorphised Silicon
Author(s) -
Dilla Duryha Berhanuddin,
M. A. Lourenço,
R. Gwilliam,
K.P. Homewood
Publication year - 2018
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/384/1/012062
Subject(s) - silicon , materials science , quenching (fluorescence) , luminescence , carbon fibers , lasing threshold , photoluminescence , crystallographic defect , full width at half maximum , optoelectronics , intensity (physics) , irradiation , wavelength , analytical chemistry (journal) , optics , chemistry , crystallography , physics , fluorescence , chromatography , nuclear physics , composite number , composite material