
Three-dimensional modelling of thermal stress in floating zone silicon crystal growth
Author(s) -
M. Plāte,
A. Krauze,
J. Virbulis
Publication year - 2018
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/355/1/012005
Subject(s) - materials science , silicon , crystal (programming language) , stress field , stress (linguistics) , dislocation , anisotropy , thermal , fracture (geology) , crystal growth , composite material , ridge , stress intensity factor , stress concentration , condensed matter physics , optics , crystallography , geology , fracture mechanics , thermodynamics , metallurgy , finite element method , chemistry , physics , linguistics , philosophy , paleontology , computer science , programming language