Open AccessPhysical models for MoS2 and their application to simulations of MoS2 MSM device
Author(s) -
Shan Zhang,
Hongbin Pu,
Yong Yang
Publication year - 2018
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/284/1/012007
Subject(s) - semiconductor , computer science , materials science , optoelectronics , semiconductor device , electron mobility , mobility model , electronic engineering , nanotechnology , engineering , telecommunications , layer (electronics)