z-logo
open-access-imgOpen Access
Influence of Incident Angle of Electron on Transmittance and Tunneling Current in Heterostructures with Bias Voltage by Considering Spin Polarization Effect
Author(s) -
Fatimah A. Noor,
Ezra Nabila,
Euis Sustini,
Khairurrijal Khairurrijal
Publication year - 2017
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/214/1/012037
Subject(s) - transmittance , quantum tunnelling , biasing , condensed matter physics , heterojunction , electron , polarization (electrochemistry) , materials science , voltage , ray , optics , optoelectronics , chemistry , physics , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here