
An approach to organic field-effect transistor above-threshold drains current compact modeling that provides monotonic decrease of the output conductance with drain bias increasing
Author(s) -
Valentin O. Turin,
B A Rakhmatov,
C H Kim,
Benjamı́n Iñı́guez
Publication year - 2016
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/151/1/012044
Subject(s) - conductance , transistor , saturation (graph theory) , monotonic function , mosfet , field effect transistor , drain induced barrier lowering , current (fluid) , condensed matter physics , threshold voltage , materials science , physics , mathematics , mathematical analysis , voltage , quantum mechanics , thermodynamics , combinatorics