Open AccessLow resistance Cu3Ge compounds formation by the low temperature treatment of Cu/Ge system in atomic hydrogen
Author(s) -
A. I. Kazimirov,
E. V. Erofeev,
I. Fedin,
V. A. Kagadei,
Y N Yurjev
Publication year - 2016
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/135/1/012016
Subject(s) - hydrogen , stoichiometry , analytical chemistry (journal) , activation energy , diffusion , phase (matter) , materials science , crystallite , atomic diffusion , adsorption , layer (electronics) , chemistry , crystallography , nanotechnology , metallurgy , thermodynamics , organic chemistry , physics , chromatography
The research deals with the regularities for Cu[3]Ge compound formation under the low temperature treatment of a double-layer Cu/Ge system deposited on i-GaAs substrate in atomic hydrogen flow. The treatment of a Cu/Ge/i-GaAs system with layer thicknesses, respectively, of 122 and 78 nm, in atomic hydrogen with a flow rate of 10{15} at.·сm{-2} s{-1} for a duration of 2.5{-10} min at room temperature, leads to an interdiffusion of Cu and Ge and formation of a polycrystalline film containing stoichiometric phase Cu[3]Ge. The film consists of vertically oriented grains of dimensions 100-150 nm and has a minimum specific resistance of 4.5 [mu omega] сm. Variation in the treatment duration of Cu/Ge/i-GaAs samples in atomic hydrogen affects Cu and Ge distribution profiles, the phase composition of films formed, and the specific resistance of the latter. As observed, Cu3Ge compound synthesis at room temperature demonstrates the stimulative effects characteristic of atomic hydrogen treatment for both Cu and Ge diffusion and for the chemical reaction of Cu[3]Ge compound generation. Activation of these processes can be conditioned by the energy released during recombination of hydrogen atoms adsorbed on the surface of a Cu/Ge/i-GaAs sample