Open AccessParticularities of the interstitial atoms and vacancies clusters formation in a thin cadmium telluride foil during in situ electron irradiation in a TEM
Author(s) -
Yu. Yu. Loginov,
А. В. Мозжерин,
N. N. Paklin
Publication year - 2022
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1230/1/012013
Subject(s) - foil method , cadmium telluride photovoltaics , irradiation , transmission electron microscopy , materials science , dislocation , semiconductor , thin film , electron , electron beam processing , crystallography , condensed matter physics , chemistry , nanotechnology , optoelectronics , composite material , physics , quantum mechanics , nuclear physics
The formation of interstitial atoms and vacancies, as well as their clusters in the form of dislocation loops and voids in CdTe is simulated. The sizes and features of the growth of dislocation loops and voids were determined depending on the irradiation time, taking into account the decrease in the number of nodes of the semiconductor crystal lattice with the irradiation time, since in experiments we studied a thin CdTe foil in a transmission electron microscope (TEM). The calculated and experimental data are compared.