Open AccessElectro-Magnetic switching in NiO-Graphene film
Author(s) -
S. Goswami,
Mou Chakraborty,
D. De
Publication year - 2022
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1225/1/012051
Subject(s) - non blocking i/o , materials science , graphene , pulsed laser deposition , thin film , raman spectroscopy , nickel oxide , optoelectronics , resistive random access memory , electrical resistance and conductance , electrical resistivity and conductivity , oxide , magnetic field , nanotechnology , voltage , optics , composite material , electrical engineering , metallurgy , chemistry , biochemistry , physics , engineering , quantum mechanics , catalysis
Nickel oxide (NiO) thin film is grown via pulse laser deposition (PLD) technique and it is trapped in between conducting graphene films deposited through the same technique. Epitaxial crystalline growth of both NiO and graphene films are confirmed from X-ray diffraction studies. Raman studies propose creation of pure graphene film with acceptable defects. Electrical transport of the NiO film reveal resistance switching properties for an wide range of temperature which is useful for resistive random access memory (RRAM) and electric-switch . Besides electrical switching, the transport properties of the NiO film depict a systematic response in influence of magnetic field. Resistance of the NiO film changed significantly with external magnetic field which makes the system useful as a magnetic-switch .