Open AccessOptimization techniques for p-GTO thyristor design
Author(s) -
Miron J. Cristea,
F. Babarada
Publication year - 2022
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1216/1/012013
Subject(s) - thyristor , gate turn off thyristor , mos controlled thyristor , integrated gate commutated thyristor , electrical engineering , voltage , blocking (statistics) , static induction thyristor , power semiconductor device , electronic engineering , materials science , computer science , engineering , transistor , gate oxide , computer network
A new type of semiconductor power device was devised in the early ’90s as an alternative to the classic Gate Turn-Off (GTO) thyristor. Because the low-doped n-base was replaced by a low-doped p-base, it was called the p-GTO. Its main advantage is a higher possible control voltage when the device is switched off, leading to the possibility of a higher blocking anode current (IATO) and a lower turn-off time. The studies and techniques employed with the help of SILVACO-TCAD simulation software Athena and Atlas show that the p-GTO has higher breakdown voltages compared with its classic counterpart and similar on-state voltage (VT) and switching characteristics when replacing the GTO in the same circuit. Specific circuit improvements, like an affordable higher turn-off gate voltage, will drive the p-GTO into even faster switching operation.