Open AccessEnhancement of the photovoltaic performance of dye-sensitized solar cell using porous silicon layer as photoelectrode
Author(s) -
Yosr Ee-D Gamal,
T. Abdallah,
G. M. Youssef
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1171/1/012002
Subject(s) - materials science , dye sensitized solar cell , porous silicon , scanning electron microscope , current density , open circuit voltage , solar cell , photoluminescence , electrolyte , etching (microfabrication) , layer (electronics) , short circuit , optoelectronics , silicon , porosity , nanotechnology , voltage , composite material , chemistry , electrode , physics , quantum mechanics
Porous Silicon Dye-sensitized solar cell (PS-DSSC) with N719 Dye was employed as photoelectrode. PS layers were formed on textured crystalline silicon CZ-Si (100) by electrochemical etching (ECE) in hydrogen fluoride (HF) based electrolyte at constant current density for different etching times. The morphological properties of the PS were investigated by scanning electron microscopy (SEM). The optical properties of the textured surfaces are studied using photoluminescence (PL) and reflectivity measurements. The bandgaps of PS from UV-Vis and PL measurements increase to 1.9 eV. The Current-Voltage (I-V) characteristics show that the short-circuit current density J sc and the open-circuit voltage V oc increased as the porosity of the PS layer increased. These results show an improvement in the efficiency of PS-DSSC.