Open AccessCharacteristics and mechanism of light-induced resistance effect in ZnO thin film/SiO2/Si heterojunction
Author(s) -
Xiaoyan Zhou,
Bo Yin
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1167/1/012005
Subject(s) - heterojunction , materials science , thin film , optoelectronics , substrate (aquarium) , sputter deposition , sputtering , biasing , layer (electronics) , crystallite , optics , voltage , nanotechnology , electrical engineering , oceanography , engineering , geology , physics , metallurgy
The polycrystalline ZnO thin films have been deposited on p-Si(100) substrate with a native SiO 2 layer by radio frequency magnetron sputtering. The photoinduced position sensitivity of the ZnO thin film/SiO 2 /Si heterojunction has been investigated. The resistance relative change ratio of ZnO/SiO 2 /Si was about 1041% at 1.0 bias voltage when the different positions of the heterojunction surface were illuminated by a He-Ne laser with 5 mW power and 50 μm diameter spot. A gradient distribution of light-generated electrons in the sample varied with the location of the light spot. The reason was that the distribution of carrier density is different between the illuminated and unilluminated location.