Open AccessThe optimized electrochemical deposition of bismuth-bismuth telluride layered crystal structures
Author(s) -
Aliaksei Bakavets,
Yauhen Aniskevich,
Г. А. Рагойша,
Н. Цынцару,
Henrikas Cesiulis,
Е.А. Streltsov
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1140/1/012016
Subject(s) - bismuth telluride , materials science , chalcogenide , bismuth , telluride , deposition (geology) , electrochemistry , tellurium , overpotential , electrolyte , semiconductor , cathodic protection , inorganic chemistry , electrode , chemical engineering , metallurgy , chemistry , optoelectronics , composite material , thermal conductivity , paleontology , thermoelectric materials , sediment , engineering , biology
Underpotential deposition, i.e. the cathodic deposition above reversible potential E(Me n+ /Me), produces an atomic layer of a metal on a semiconductor electrode, such as e.g. bismuth telluride. This phenomenon allows electrodeposition of superlattices formed of building blocks of a layered semiconductor structure joined by biatomic metal interlayer. This work outlines the optimized pulse potential controlled electrodeposition of (Bi 2 )m(Bi 2 Te 3 ) n films produced under mentioned above technique. The influence on the morphology of the electrodeposited films of key-parameters as applied pulse frequency, duty cycle, a routine of sodium dodecyl sulfate introduction in the electrolyte is discussed. The optimized procedure comprises a short (about 10 s) cathodic pre-treatment at high overpotential of the cathodic reaction, the subsequent periodic switching for 120 min between potentials of electrodeposition and refinement at 0.1 Hz and 5% duty cycle with addition of surfactant 60 min after the start of the electrodeposition.