Open AccessThird Order Band Pass Filter With Double-Gate MOSFET: A Simulation Perspective
Author(s) -
Danurshan Naidoo,
Viranjay M. Srivastava
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1126/1/012019
Subject(s) - mosfet , filter (signal processing) , electronic engineering , butterworth filter , band pass filter , constant k filter , computer science , reliability (semiconductor) , low pass filter , filter design , power (physics) , prototype filter , electrical engineering , physics , engineering , voltage , transistor , quantum mechanics
It is an extended version of the mathematical analysis of the proposed 3 rd order Band Pass Filter (BPF). This device design uses the Double-Gate (DG) MOSFET’s which provides a better performance and reliability of the band pass filter. This 3 rd order BPF design improves the device performance characteristics, such as enhanced power efficiency and switching capabilities, due to the properties of DG MOSFET technology. Simulation analysis of the proposed filter model has been performed. The BPF model has been designed for lower and upper cut-off frequencies of 100 kHz and 1.7 MHz, respectively. The 3 rd order BPF filter has been modeled to have Butterworth characteristics, thus having a maximally flat pass-band response.