Open AccessABC recombination model for quantum dot laser
Author(s) -
Ivan B. Karomi,
Ammar Zakar,
Mohammed S Alghamdi
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1126/1/012004
Subject(s) - auger effect , laser , spontaneous emission , quantum dot laser , semiconductor , quantum dot , physics , semiconductor laser theory , optoelectronics , auger , atomic physics , materials science , optics
In this paper, we applied the ABC model in quantum dot (QD) semiconductor laser for the first time. We used a 1000μm cavity length InAsP/GaAs quantum dot laser emitting at 761nm, which was improved at Cardiff University. The ABC model is used to estimate the carrier losses that are caused by spontaneous emission and Auger recombination in semiconductor materials. It is shown that the ABC model is applicable in such lasers. The results show that the Shockley-Read-Hall (A) is 2.03 ×l0 9 sec −1 . The radiative coefficient (B) is 2.28 ×l0 −14 cm −3 .sec −1 and the Auger recombination (C) is around 8 ×l0 −37 cm −6 .sec −1 . The results are very close to the actual findings as measured by several different methods. Moreover, the measurement method is feasible, which can pave the path for the use of this procedure to determine the losses mechanism in semiconductor lasers.