Open AccessDeterioration of Watt and Voltage Characteristics of AlGalnP Heterostructures under Irradiation by Fast Neutrons
Author(s) -
А. В. Градобоев,
К Н Орлова
Publication year - 2016
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/110/1/012026
Subject(s) - irradiation , heterojunction , optoelectronics , diode , materials science , neutron , wavelength , watt , voltage , optics , power (physics) , physics , nuclear physics , quantum mechanics
The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. The research was completed for light emitting diodes (emission wavelengths 623 nm and 590 nm) under fast neutron irradiation in passive mode. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures ([lambda]=625 nm)