Open AccessReceiving Perfect SiC-AlN Monocrystals of Solid Solution SiC-AlN/SiC and Models of Series Lanes of Electroluminescence Light-Emitting Diodes; their Use
Author(s) -
А. В. Санкин,
В. И. Алтухов,
N. V. Vahilevich
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1079/5/052079
Subject(s) - materials science , electroluminescence , silicon carbide , diode , light emitting diode , optoelectronics , wide bandgap semiconductor , carbide , solid solution , silicon , composite material , metallurgy , layer (electronics)
The 4H-SiC monocrystals and SiC-AlN solid solutions are described. Models of a series of strips (levels) of solid solutions of Silicon carbide SiC - AlN and hetero-structures (light-emitting diodes) n-SiC/p-(SiC) 1-x (AlN) x as a function of x composition are proposed. The SiC/ 1-x (AlN) x diagram defines the positions of the glow center levels, depending on x. In the series of electroluminescence bands of the light-emitting diodes SiC/SiC-AlN, continuous dependences of the positions of short-wave and long-wave bands in the K-minimum conductivity zone are defined, respectively, as continuous functions of the density of current through contact. This is very important for the wide practical application of the resulting light-emitting diodes with the ability to select radiation throughout the visible spectrum when changing the composition of x solid silicon carbide solution.