Open AccessA novel to control defects of P-N semiconductor device by SRFE process
Author(s) -
N. Sangwaranatee,
Itsara Srithanachai,
Surasak Niemcharoen
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1070/1/012010
Subject(s) - semiconductor , process (computing) , flash (photography) , materials science , optoelectronics , fabrication , semiconductor device , nanotechnology , computer science , optics , medicine , physics , layer (electronics) , alternative medicine , pathology , operating system
This paper present the results from soft radiation flash exposure (SRFE) process. In principle of semiconductor device always has defect in structure from fabrication process and impact from usage environment. Although, device have control process but still has unexpected defects. Then, I would like to share results of SRFE process to control defects in P-N semiconductor device by exposed on device for few second with optimize radiation energy. The defects has disappear after passed SRFE process. The optimize of exposure energy and time will cure or remove defect in devices structure.