Open AccessImpact of SRFE process on electrical properties of P-N photodetector
Author(s) -
N. Sangwaranatee,
Itsara Srithanachai,
Surasak Niemcharoen
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1070/1/012009
Subject(s) - radiation , photodetector , flash (photography) , process (computing) , optoelectronics , semiconductor , radiation exposure , materials science , computer science , optics , electrical engineering , physics , engineering , medicine , nuclear medicine , operating system
Semiconductor properties change from soft radiation flash exposure process (SRFE) will present in this paper. Semiconductor device use with radiation application and always degrade because impact from radiation will damage on device structure. Currently, the defects from radiation cannot explain all of impact to electrical properties because has wind range in several application. However, this paper will present influent from Roentgen radiation on P-N photodetector device by expose for few second and low energy. The radiation will expose on device for many time to reach target time and will control distance between radiations machine and devices. Forward current of device after SRFE process has changed in positive way by build in potential (V bi ) decrease around 0.2V and forward current increase around 4 orders.