Open AccessPreparation & characterization of CuS thin films via spray pyrolysis technique for photovoltaic applications.
Author(s) -
V. Mary Pradeepa,
Kiran Kishore Kesavan
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1070/1/012006
Subject(s) - thin film , materials science , thiourea , copper , spray pyrolysis , band gap , substrate (aquarium) , analytical chemistry (journal) , pyrolysis , doping , chemical engineering , chalcopyrite , semiconductor , nanotechnology , optoelectronics , metallurgy , chemistry , organic chemistry , oceanography , geology , engineering
Copper Sulphide (CuS) is a p-type semiconductor material widely used in photovoltaic applications. CuS thin films have been coated on a glass substrate at 300°C by spray pyrolysis technique. Copper Sulphate in different concentrations with constant concentration of Thiourea (without any complexing agent) was used as a precursor to fabricate the films. The different properties of the films were characterized. Their structural properties were done by X-ray diffraction. XRD analysis showed that the films are high crystalline in nature. The morphological properties were done by SEM and EDX. The atomic percentage of CuS particles were recorded by EDX. The optical properties were studied by UV-Spectrometer in visible to infrared region. The band gap value of the film varied from 2.2eV to 2.7 eV with the different concentration of Copper Sulphate.