Open AccessPhoto-, cathodic- and electroluminescence-band models in solid (SiC)1-x(AIN)x luminescence centers and SiC/SiC-AIN LEDs
Author(s) -
R. Kh Dadashev,
А. В. Санкин,
В. И. Алтухов,
Г. К. Сафаралиев,
D. Z. Elimkhanov,
Vladimir Antonov
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1064/1/012009
Subject(s) - electroluminescence , materials science , luminescence , light emitting diode , heterojunction , optoelectronics , diode , nanotechnology , layer (electronics)
The paper presents models of bands (levels) in solid (SiC) 1-x (AlN) x luminescence centers and n-SiC/p-(SiC) 1-x (AlN) x heterostructures (light-emitting diodes). The diagram of (SiC) 1-x (AlN) x energy gaps shows the positions of luminescence levels, subject to x. A SiC/SiC–AlN series of electroluminescence bands, for the first time, is found to have a continuous relationship between the positions of short-wave and long-wave band maxima in a K-minimum conduction band, respectively, as continuous functions of contact current density.