Open AccessImpact of CVD-synthesis parameters and film thickness on growth rate of single-crystal diamond
Author(s) -
A L Maslov,
Н. И. Полушин,
А. И. Лаптев,
T. V. Martynova,
A M Grechikhina
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1047/1/012181
Subject(s) - diamond , chemical vapor deposition , materials science , misorientation , substrate (aquarium) , growth rate , surface finish , crystal (programming language) , crystal growth , surface roughness , layer (electronics) , volumetric flow rate , nanotechnology , crystallography , composite material , chemistry , geometry , thermodynamics , geology , microstructure , oceanography , mathematics , physics , computer science , grain boundary , programming language
The widespread use of CVD-reactors of various constructions and the influence of many factors on the formation of energy-saturated reaction zone has led to the fact of significant difference of technological parameters optimal for each reactor even of one brand. An economically important parameter, in addition to the quality of the obtained single-crystal diamond layer, is the growth rate, which depends on many factors: the flow rate and chemical composition of gases, pressure in the reaction chamber, substrate temperature, the shape of the formed plasma cloud, dimensions and shape of molybdenum substrate holders and et al. This work is devoted to the experimental determination of the single-crystal CVD-diamonds growth rate across various synthesis conditions on Ardis 300. In research, we shown the effect of the thickness of the synthesized diamond layer on the rate of formation of subsequent diamond layers, which is associated with a change in the degree of misorientation between the crystallographic plane (100) and direction [100]. Also, this can be associated with an increase in the roughness of the growing surface, leading to an increase in the specific number of active centers thermodynamically favorable for carbon deposition during the formation of the crystal structure of diamond.