Open AccessStudy of the effect of the thickness of the photosensitive layer of perovskite on its efficiency using SCAPS-1D software
Author(s) -
A. A. Rozhko,
Victor Petrov,
A. V. Sayenko
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1035/1/012032
Subject(s) - photovoltaic system , perovskite (structure) , solar cell , optoelectronics , perovskite solar cell , materials science , heterojunction , schottky barrier , quantum efficiency , engineering physics , energy conversion efficiency , software , layer (electronics) , electron , computer science , electronic engineering , nanotechnology , electrical engineering , physics , engineering , chemical engineering , diode , quantum mechanics , programming language
Photovoltaic cells are the best way to convert solar energy into electrical energy by absorbing photons emitted by the sun. This paper presents the results of studies of the effect of the thickness of the absorbing layer of perovskite on the quantum efficiency of the solar cell, as well as on its efficiency. These results were obtained by modelling in the software product SCAPS-1D. Perovskite photovoltaic is getting to be a distinctly predominant option for the conventional solar cells achieving maximum efficiency of 22.1% and more. This work is concerned about the design and analyses of lead-based perovskite solar cell model with the architecture of TiO2/CH3NH3PbI3/spiro-OMeTAD. The analysis of solar cell architecture is done using the Solar Cell Capacitance Simulator (SCAPS). It is a computer-based software tool and is well adapted for the analyses of homo and heterojunctions, multi-junctions and Schottky barrier photovoltaic devices. This software tool runs and simulates based on the Poisson’s and continuity equation of electrons and holes. For this model, it is used to optimize the various parameters such as thickness, the defect density of absorber layer, doping concentrations (ND and NA) of Electron Transport Material (ETM) and Hole Transport Material (HTM)