Open AccessConduction mechanism of Co-doped ZnO transparent memristive devices
Author(s) -
Firman Mangasa Simanjuntak,
Sridhar Chandrasekaran,
Om Kumar Prasad,
Femiana Gapsari,
Themis Prodromakis,
Tseung–Yuen Tseng
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1034/1/012139
Subject(s) - dopant , materials science , acceptor , doping , thermal conduction , electron , optoelectronics , dielectric , chemical physics , condensed matter physics , nanotechnology , chemistry , composite material , physics , quantum mechanics
The Co dopant substitutes the Zn atomic position in the hexagonal crystal lattice and generates acceptor defects. These defects play significant role in modulating the conduction mechanism of the memristive device. The devices without Co dopant have high concentration of donor defects so that the electron can flow easily through hopping these donor defects; henceforth, only weak filaments can be formed during the set process. Meanwhile, the increase of the acceptor defects in the films enhances the film resistivity. This acceptor defects also contribute to an increase of barrier height at the electrode/dielectric interface where the electrons require higher energy to overcome this barrier and, eventually, induce the formation of strong filaments during the set process.