Open AccessComparative performance analysis of Carbon Nanotube and Si-Nanotube based Field effect Transistors
Author(s) -
Raj Kumar,
Shashi Bala,
Arvind Kumar
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1033/1/012028
Subject(s) - carbon nanotube field effect transistor , materials science , carbon nanotube , field effect transistor , transistor , nanotube , mosfet , nanotechnology , optoelectronics , semiconductor , silicon , electrical engineering , engineering , voltage
The continuous scaling of scaling of conventional planar transistors has migrated to nanoscale regime to achieve better performance of the device by mainstream semiconductor industry. To suppress the short channel effects arises in nanoscale devices, many 3D devices and materials have been proposed and investigated. Carbon Nanotube can be used as best materials for replacement of channel material MOSFET transistors due to its good electrical properties. Silicon nanotube field effect transistor is having two gates as an inner and outer gates, provides excellent electrostatic control and short channel effects immunity. In this paper, Carbon Nanotube Field Effect Transistor and Si- Nanotube field effect transistors have been designed and investigated. Performance of CNTFET and Si-NT MOSFET has been analysed and compared. These two field effect transistors may be considered for future of semiconductor industry.