Open AccessInAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications
Author(s) -
L. E. Velikovskiy,
P. Е. Sim,
O. I. Demchenko,
Natalya Kurbanova,
Ivan Filippov,
A. V. Sakharov,
W. V. Lundin,
Е. Е. Заварин,
D. A. Zakheim,
D. S. Arteev,
M. A. Yagovkina,
A. F. Tsatsul'nikov
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1019/1/012071
Subject(s) - high electron mobility transistor , materials science , optoelectronics , epitaxy , microwave , heterojunction , microwave power , doping , transistor , wide bandgap semiconductor , nanotechnology , electrical engineering , voltage , computer science , layer (electronics) , telecommunications , engineering
High electron mobility transistors (HEMTs) technologies based on AlGaN/GaN and InAlN/GaN heterostructures have been developed. The research focused on influence of epitaxial growth conditions and buffer doping profiles on electrical properties HEMTs. An output power density of 4W/mm at 17 GHz was demonstrated for InAlN/GaN HEMTs and 7W/mm at 10 GHz for AlGaN/GaN HEMTs.