
Challenges in p-type Oxide Based Thin Film Transistor
Author(s) -
Keka Mukhopadhyaya,
P. Srividya
Publication year - 2021
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1012/1/012055
Subject(s) - thin film transistor , oxide , oxide thin film transistor , transistor , materials science , nickel oxide , scope (computer science) , optoelectronics , thin film , tin oxide , electronic engineering , computer science , nanotechnology , electrical engineering , layer (electronics) , metallurgy , engineering , voltage , programming language
p-type Thin Film Transistor (TFT) exhibits performance characteristics which is inferior to its n-type counterpart, which in turn limited its scope of wide application mainly in the domain of transparent and flexible electronics. This paper thoroughly reviews the basic operation of TFT, different parameters used to evaluate performance. A comparison of performance analysis of different oxide based p-type TFT viz. copper oxide, tin oxide and nickel oxide are done against different relevant parameters.