Open AccessCreation of ultrathin niobium nitride films at temperatures less than 100 °C
Author(s) -
B. Goncharov,
Б. А. Гурович,
K. E. Prikhod’ko,
M. M. Dementyeva,
V. L. Stolyarov,
E. D. Olshansky,
A. G. Domantovsky,
L. V. Kutuzov,
E. M. Malieva,
А. А. Черепанов
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/1005/1/012023
Subject(s) - high resolution transmission electron microscopy , materials science , niobium , sapphire , niobium nitride , thin film , microstructure , nitride , nanometre , sputtering , sputter deposition , analytical chemistry (journal) , transmission electron microscopy , nanotechnology , layer (electronics) , composite material , optics , metallurgy , chemistry , laser , chromatography , physics
Thin NbN films were synthesized by a method of magnetron sputtering of solid Nb targets by nitrogen ions at temperatures less than 100 °C on substrates of the sapphire. The dependences of electrical resistance of films on the temperature in range 4.2 K – 300 K were measured. Volt-ampere characteristics and critical current density vs film thickness of films were made at a temperature of 4.2 K. The microstructure and film-depth chemical composition of thin films were investigated by analytical methods of the transmission electronic microscopy (HRTEM, EELS) on a cross-section samples made by the FIB technique. HRTEM and EELS study showed the Nb 0.84 N phase and poly-crystal structure of niobium nitride films. It was found that the critical current density falls down by an order of magnitude when the film thickness was less than 4 nanometers.