Open AccessStudy of Ar+ and He+ implanted SOS-structures
Author(s) -
Amiran Bibilashvili,
Lado Jibuti,
Zurab Jibuti,
Givi Skhiladze
Publication year - 2021
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/906/1/012022
Subject(s) - ion , observable , silicon , reflection (computer programming) , getter , atomic physics , materials science , electron , optoelectronics , physics , nuclear physics , computer science , quantum mechanics , programming language
In the work Silicon – on - insulator nanostructures after implantation by various doses of ions 4 He + and 40 Ar + are investigated. Researches were carried out by measurement of optical reflection spectrum and magnitude of work function of an electron. It is shown that ions 40 Ar+ in Silicon – on - insulator nanostructures, providing high efficiency of gettering influence, incorporate the neutral divacancy responsible for an observable minimum in ranges of reflection 0.73-0.75eV. As a result of implanted by ions 4 He + the gettering doesn’t occur and the entered defects are divacancies with one negative charge, responsible for an observable maximum in reflection ranges 0.73-0.75eV. The received results indicate possibility of purposeful updating of Silicon – on - insulator nanostructures for improvement of their optical characteristics. Start your abstract here… The abstract should include the purpose of research, principal results and major conclusions. References should be avoided, if it is essential, only cite the author(s) and year(s) without giving reference list. Prepare your abstract in this file and then copy it into the registration web field.