Open AccessEffect of Photoconductivity of Silicon Oxide Passivation Film on the Performance of Crystalline Silicon Cell and Module
Author(s) -
Shaoliang Wang,
Gang Zhou,
Yilun Wang,
Xiaofan Deng,
Boer Xie
Publication year - 2021
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/898/1/012010
Subject(s) - passivation , materials science , silicon , optoelectronics , crystalline silicon , oxide , thermal oxidation , silicon oxide , thermal stability , solar cell , chemical engineering , composite material , layer (electronics) , metallurgy , silicon nitride , engineering
In the paper, the effect of different deposition process of silicon oxide passivation film on the performance of crystalline silicon cell and module was studied. It was found that the thermal oxidation passivation film has better passivation effect than ozone oxidation passivation film at room temperature, and the cell and module has good stability and low attenuation. The thermal oxidation passivation effect is related to the film thickness. The thicker the film thickness is, the better the anti-PID (potential induced attenuation) performance is. The results can provide reference for photovoltaic industry.