Open AccessAnalysis of Reverse Recovery Characteristics of Anti-parallel Diode
Author(s) -
Bo Wang
Publication year - 2021
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/766/1/012046
Subject(s) - insulated gate bipolar transistor , diode , flyback diode , step recovery diode , current injection technique , power semiconductor device , electrical engineering , power (physics) , bipolar junction transistor , transient (computer programming) , materials science , process (computing) , optoelectronics , voltage , electronic engineering , engineering , transistor , computer science , schottky diode , physics , flyback transformer , quantum mechanics , operating system , transformer
Insulated gate bipolar transistor (IGBT) is widely used in various renewable green energy systems such as wind power generation and solar power generation at present. High-power IGBT modules usually include IGBT chips and anti-parallel diodes, and the transient characteristics of anti-parallel diodes will affect the external port characteristics of IGBT modules. Based on semiconductor physics and diode basic structure, this paper analyzes four stages of diode reverse recovery process, and describes the change process of turn-off time and stored charge by a step recovery process. Finally, the voltage and current waveforms of diode reverse recovery process are simulated and verified for a certain IGBT module.