Numerical Modelling Of The Effect Of Temperature And Thickness On The Electrical Properties Of Polycrystalline Semi-Conductor Solar Cells [CdTe and Cu(In,Ga)Se2(CIGS)] Using One Dimensional Device Simulation

A numerical simulation program SCAPS 1D (solar cell and capacitance simulator) was used in the simulation of CdTe and CIGS solar cells. We concentrated on the effect of temperature and thickness on the electrical properties of CdTe and CIGS solar cells and the agreement between the simulations and measurements was shown and discussed using SCAPS 3.3.00. The influences of temperature and thickness on CdTe and CIGS solar cells were investigated by I-V measurements. The simulated efficiencies for CdTe and CIGS solar cells at 300K were observed to be 16.03% and 16.54% which compare very well with the measured efficiencies 10.72% for CdTe and 15.96% for CIGS solar cell at same temperature. It was found out that as temperature and thickness increases from (200 – 400)K and (2 – 6μm, efficiencies decrease from 18% to 10% for CdTe and 20% to 8% for CIGS from (250 – 400)K and (1 – 5μm respectively.