Open AccessResearch on Electro-thermal Model Simulation of IGBT Switching Transient
Author(s) -
Bo Weng
Publication year - 2021
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.179
H-Index - 26
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/702/1/012037
Subject(s) - insulated gate bipolar transistor , transient (computer programming) , thermal , materials science , bipolar junction transistor , current injection technique , transistor , electrical engineering , electronic engineering , mechanics , computer science , voltage , engineering , physics , thermodynamics , operating system
The electro-thermal model of Insulated Gate Bipolar Transistor(IGBT) can be used to simulate the operating characteristics of devices at different temperatures. Considering the relationship between internal parameters, semiconductor physical constants and temperature, the electrical model of IGBT at a single temperature is extended to an electro-thermal model which can reflect the working characteristics at different temperatures. This model takes into account both simulation accuracy and simulation speed. Finally, the IGB model is selected, and the IGBT switching transient at different temperatures is verified by experiments.