Open AccessResearch on junction termination of 6500V IGBT
Author(s) -
Mingchao Gao,
Rui Jin,
Yaohua Wang,
Li Li,
Jiang Liu,
Li Cui,
WeiFeng Sun,
Ruifen Nie,
Junmin Wu
Publication year - 2021
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.179
H-Index - 26
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/702/1/012009
Subject(s) - insulated gate bipolar transistor , materials science , interface (matter) , breakdown voltage , voltage , doping , optoelectronics , electrical engineering , charge (physics) , junction temperature , composite material , power (physics) , engineering , physics , thermodynamics , capillary number , quantum mechanics , capillary action
In this paper, a novel junction termination design for 6500V IGBT is proposed. A floating P+ rings termination where the P+ rings are highly doped is less than 2500um. The termination is immune to interface charges at the Si/SiO 2 interface and other layers at the top as well as in the moulding compound. The simulation results show that the breakdown voltages are all above 7000V when the interface charges change from -3E11cm −2 to 5E11cm −2 . This device was fabricated and the test results show that the breakdown voltage is more than 7000V, which is agreement with the simulation results.