Open AccessInvestigation of the transient characteristics of S-diodes based on silicon compensated by vanadium
Author(s) -
Sh. A. Shoyusupov,
Sh Rakhmatullaev
Publication year - 2020
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.179
H-Index - 26
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/614/1/012040
Subject(s) - vanadium , silicon , ampoule , materials science , diode , diffusion , impurity , analytical chemistry (journal) , base (topology) , wafer , electrical resistivity and conductivity , metallurgy , chemistry , composite material , electrical engineering , optoelectronics , thermodynamics , mathematical analysis , physics , mathematics , organic chemistry , chromatography , engineering
To obtain more photosensitive S-diodes, silicon should be compensated for by impurities, which increase the photosensitivity of the original crystals. Diffusion of vanadium in silicon was carried out in evacuated or open quartz ampoules at a temperature of 900-1250 °C for 2-20 hours. Silicon wafers 0.5-1.0 mm thick and an alloying element of vanadium were placed in the ampoule. Usually used n-Si with ρ ~ 5 ÷ 200 Ω·sm and with a thickness of 0.2-0.5 mm. The concentration of deep levels introduced during diffusion was 1014 cm -3 . The resistivity of silicon after diffusion increased to 10 3 -10 4 Ω·sm at 300 K, and the diffusion length Ld decreased to 10-30 μm. S-diodes were made in a vacuum by melting aluminum and Au + 0.1% Sb alloy at 700 °C for 1 min. The contact area (S) is approximately 0.2 mm2, the base thickness d = 0.2-1.0 mm. Attitude d/L d ≈10 ÷ 100. I incline ~ 1/t inclusion in a wide range of currents is linear, where I incline > I bre . Determined by the slope I incline ~ 1/t inclusion the charge is Q cr = 3.52·10 -9 C. In this case, the average concentration of injected current carriers in the base is n = 5.44·10 13 cm -3 , which is in good agreement with the concentration of electroactive atoms V in Si, determined by capacitive methods. The dependence 1 V t − 1 V ∞ for S-diodes from n-Si has a complex form at each temperature and is approximated by two exponents. The obtained experimental results, their analysis and conclusions on S-diodes from Si can be used as a temperature relay, photo relay, switches and photodetectors controlled by the sensitivity current.