Open AccessTunable Schottky barrier height of ZnO films by Cu doping
Author(s) -
Eka Nurfani,
W.A.P. Kesuma,
A. Lailani,
Mohamad Samsul Anrokhi,
Grandprix T.M. Kadja,
Monna Rozana,
Wahyu Solafide Sipahutar,
Mohd Arif
Publication year - 2020
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/537/1/012038
Subject(s) - schottky barrier , materials science , photosensitivity , photocurrent , optoelectronics , photodetector , ultraviolet , doping , dark current , schottky diode , trapping , ecology , diode , biology
Understanding a mechanism behind photosensitivity in oxide materials is important to realize future photodetector devices. We have studied electrical properties of ZnO:Cu (0-2.5 at.%) films deposited by a spray technique. Here, Ag-ZnO-Ag planar configuration was used to study the Schottky barrier. Using current-voltage (I-V) characterization, a significant increment in the photocurrent is observed in all samples, indicating a photosensitivity behavior. The Schottky barrier is clearly observed in the doped sample. The Cu concentration of 1.5 at.% show the highest Schottky barrier height (0.8 eV), which may be originated from carrier trapping under dark and carrier de-trapping under ultraviolet radiation. Thus, our result is essential to improve the functionality of ZnO for photodetector applications.