Open AccessControllable Growth of Bilayer MoS2 Crystals by Reverse-Flow Chemical Vapor Deposition
Author(s) -
Siyuan Wang,
Guang Wang,
Gang Peng,
Zheng Li
Publication year - 2020
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.179
H-Index - 26
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/453/1/012085
Subject(s) - stacking , bilayer , molybdenum disulfide , chemical vapor deposition , materials science , nucleation , semiconductor , nanotechnology , optoelectronics , compound semiconductor , layer (electronics) , chemistry , epitaxy , membrane , organic chemistry , composite material , biochemistry
Molybdenum disulfide (MoS 2 ) is a two-dimensional (2D) semiconductor, which shows potential applications in catalysis, optoelectronics and electronics. The stacking order in layered materials induces different performances in interlayer couplings and electronic devices. Therefore, controlling the stacking orientations is necessary but remains a significant challenge. Here uniform and high-quality bilayer MoS 2 flakes (AA/AB) have been synthesized by reverse-flow chemical vapor deposition (CVD), through controlling growth temperatures. 770 °C is suitable for the growth of AA stacking and AB stacking prefers higher temperature at 820 °C. The reverse-flow helps to generate bilayer MoS 2 with few nucleation points and the general method for the synthesis of bilayer MoS 2 in different stacking orientations paves a way for development of 2D semiconductor applications.