Open AccessInvestigation of the Photodetector Performance Based on the Ga2O3/Sb2Se3 Heterojunction
Author(s) -
Bowen Zhao,
Xingzhao Liu
Publication year - 2020
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.179
H-Index - 26
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/440/5/052031
Subject(s) - photodetector , responsivity , heterojunction , optoelectronics , materials science , rectification , antimony , specific detectivity , selenide , fabrication , gallium , voltage , physics , medicine , selenium , alternative medicine , pathology , quantum mechanics , metallurgy
This work demonstrates the fabrication of the p-n heterojunction photodetector between the n-type gallium oxide (Ga 2 O 3 ) and the p-type antimony selenide (Sb 2 Se 3 ). The p-n junction exhibits a turn voltage of 0.44 V and a rectification ratio of 28.25. The responsivity and detectivity of the photodetector device are as high as 9.28 mA/W and 4.23 × 10 11 Jones at 0 V bias voltage, along with the excellent photoresponse speed (the rise/decay time of 834 μs/822 μs). Such results are mainly due to the good charge separation as a result of the formation of the built-in field. Our work provides value information on the Ga 2 O3/Sb 2 Se 3 heterojunction based photodetector and enriches the opportunities on the photonic and electronic applications.