Open AccessRadiation Effect on the Parameters of Field Effect Transistors with Schottky Barrier on GaAs
Author(s) -
Amiran Bibilashvili,
Zurab Kushitashvili
Publication year - 2019
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.179
H-Index - 26
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/362/1/012071
Subject(s) - mesfet , materials science , irradiation , radiation , optoelectronics , schottky barrier , electron , transistor , heterojunction , annealing (glass) , electron beam processing , field effect transistor , analytical chemistry (journal) , chemistry , diode , optics , voltage , electrical engineering , physics , composite material , quantum mechanics , chromatography , nuclear physics , engineering
In the present work, we report the result of the study of electron and γ -radiation effect on the parameters of normally open and normally closed field effect transistors with Shottky barrier on GaAs. It has been shown that normally closed transistors are more sensitive to the action of radiation than normally opened transistors. Both transistors are more sensitive to the electron radiation. As substrates ware used epitaxial structures of GaAs of n -type conductivity doped with tellurium with N D =2×10 17 cm 3 with surface orientation [100]. Electron irradiation was conducted on the linear accelerator of RELUS type with electron energy 4 MeV at the room temperature, with the intensity of electrons flow of 2.5×10 12 e/cm 2 sec. Integral doses made 1×10 14 e/cm 2 , 5×10 14 e/cm 2 , 1×10 15 e/cm 2 and 3×10 15 e/cm 2 . The γ -radiation was conducted using the source 60 Co at the room temperature with the intensity of 5×10 3 P/sec. For the γ -radiation, visible changes of saturation flow current are observed at the doses of more than 10 5 Grey (GaAs). As whole, the γ -radiation makes an action on the parameters of MESFET in the less degree than electron irradiation. The annealing of the irradiated samples of MESFET at the temperature of 573 K in the nitrogen atmosphere for 45 min provides complete restoration of their parameters. The possible reasons for the mentioned effects are given.