Open AccessKa band High RF performance AlGaN/GaN HEMTs
Author(s) -
Lijiang Zhang,
Xiuqing Fu,
DU Peng-bo,
Yuxing Cui,
Xianjie Li,
Tong Zhang
Publication year - 2018
Publication title -
iop conference series. earth and environmental science
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.179
H-Index - 26
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/170/4/042021
Subject(s) - materials science , transconductance , high electron mobility transistor , optoelectronics , passivation , plasma enhanced chemical vapor deposition , gallium nitride , chemical vapor deposition , rf power amplifier , monolithic microwave integrated circuit , transistor , inductively coupled plasma , wafer , power added efficiency , microwave , plasma , electrical engineering , layer (electronics) , voltage , amplifier , nanotechnology , cmos , physics , quantum mechanics , engineering