Open AccessRecombination radiation of heteroepitaxial structures with InAs quantum dots grown on surface of (311)B GaAs by MBE
Author(s) -
Y A Kuznetsova,
F B Bayramov,
V. V. Toporov,
B H Bairamov,
V Yu Rud,
A P Glinushkin
Publication year - 2022
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/1096/1/012032
Subject(s) - vicinal , quantum dot , molecular beam epitaxy , materials science , substrate (aquarium) , exciton , full width at half maximum , optoelectronics , recombination , radiation , epitaxy , condensed matter physics , optics , nanotechnology , chemistry , physics , biochemistry , oceanography , organic chemistry , layer (electronics) , geology , gene